Recent Advances in Manganese Doped II-VI Semiconductor Quantum Dots

Pandey, Anshu and Das Sarma, Dipankar (2016) Recent Advances in Manganese Doped II-VI Semiconductor Quantum Dots. In: ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 642 (23, SI). pp. 1331-1339.

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Abstract

The introduction of dopants into II-VI semiconductor quantum dots (QDs) allows for the realization of materials with novel electro-optical properties. Motivated by its vast potential applications, Manganese doping into II-VI semiconductor QDs has been studied by several groups. Studies have focused on applications of manganese doped QDs as phosphors, diluted magnetic semiconductors as well as more recently their potential in light harvesting. Herein we review recent advances in understanding the emissive properties and electronic structure of Mn doped QDs. We survey synthetic approaches that have been proposed as well as advantages and disadvantages of conventional approaches to Mn doping. In particular, we discuss the advantages of reduced self-absorption, as well as the problem of emission tunability. Effects of pressure on manganese emission are discussed. We then summarize recent efforts to tune Mn emission by generating pressure and strain in nanostructured QDs.

Item Type:	Journal Article
Publication:	ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE
Publisher:	WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Additional Information:	Copy right for this article belongs to the WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	21 Mar 2017 09:45
Last Modified:	21 Mar 2017 09:45
URI:	http://eprints.iisc.ac.in/id/eprint/56416

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