Gangavarapu, Yasasvi PR and Lokesh, Punith Chikkahalli and Bhat, KN and Naik, AK (2016) Towards Barrier Free Contacts to n-type CNTFETs using Graphene Electrodes. In: 11th IEEE Nanotechnology Materials and Devices Conference (NMDC), OCT 09-12, 2016, Toulouse, FRANCE.
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Abstract
This work illustrates the performance of n-type carbon nanotube field effect transistors (CNTFET) contacted with few layer graphene. The true barrier height at graphene-CNT junction is estimated using temperature dependent I-V measurements. Thermionic emission model for carrier transport in CNTs is used in the study. The calculated barrier height values for electron transport are extremely small and slightly negative signifying the Ohmic contact of graphene with the conduction band of CNTs.
Item Type: | Conference Proceedings |
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Series.: | IEEE Nanotechnology Materials and Devices Conference |
Additional Information: | Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 31 Jan 2017 05:32 |
Last Modified: | 25 Feb 2019 11:19 |
URI: | http://eprints.iisc.ac.in/id/eprint/56143 |
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