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Laser induced Bi diffusion in As40S60 thin films and the optical properties change probed by FTIR and XPS

Naik, Ramakanta and Sahoo, Pragyan Paramita and Sripan, C and Ganesan, R (2016) Laser induced Bi diffusion in As40S60 thin films and the optical properties change probed by FTIR and XPS. In: OPTICAL MATERIALS, 62 . pp. 211-218.

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Official URL: http://dx.doi.org/10.1016/j.optmat.2016.10.004


Amorphous chalcogenide semiconducting materials are playing a pivotal role in modern technology. Such type of materials are very sensitive to electromagnetic radiations which is useful for infrared optics. In the present report, Bi doped in As40S60 thin films (As40S60, Bi06As40S54) of 800 nm thickness were prepared by thermal evaporation method. The Bi06As40S54 thin film is subjected to laser irradiation for photo induced study. The X-ray diffraction study reveals no structural change due to laser irradiation. The optical parameters are affected by both Bi addition and laser irradiation which brings a change in the transmitivity and absorption coefficient. The indirect optical band gap is found to be increased by 0.08 eV with laser irradiation with the decrease in disorderness. The Tauc parameter and Urbach energy which measures the degree of disorderness changes with Bi doping and irradiation. The refractive index is modified by the illumination process which is useful for optical applications. The optical property change is well supported by the X-ray photoelectron core level spectra. (C) 2016 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 Jan 2017 05:30
Last Modified: 31 Jan 2017 05:30
URI: http://eprints.iisc.ac.in/id/eprint/56126

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