Effect of post deposition annealing on the structure, morphology, optical and electrical properties of CuInGaSe2 thin films

Pugalenthi, A S and Balasundaraprabhu, R and Prasanna, S and Habibuddin, S and Muthukumarasamy, N and Rao, Mohan G and Kannan, M D (2016) Effect of post deposition annealing on the structure, morphology, optical and electrical properties of CuInGaSe2 thin films. In: OPTICAL MATERIALS, 62 . pp. 132-138.

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Abstract

Polycrystalline copper indium gallium diselenide (CIGS) thin film is a favourable candidate for solar cell applications. In the present work the effect of post-deposition annealing on the structure, surface morphology, optical and electrical properties are discussed. Initially, gallium rich CIG thin films were deposited by RF magnetron sputtering followed by an indium rich CIG layer and subjected to selenization to realize CIGS stoichiometry. X-ray diffraction (XRD) results revealed the polycrystalline nature of the films with chalcopyrite structure having preferential orientation along <112> direction normal to the substrate. Optical properties of CIGS thin films were studied using UV-vis spectrophotometry and the band gap of CIGS was found to be around 1.15 eV. Hall Effect studies carried out on the CIGS thin films showed a linear dependence of conductivity with post deposition annealing. The elemental composition of the films was quantified using X-ray photoelectron spectroscopy (XPS) and the results are discussed. (C) 2016 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	OPTICAL MATERIALS
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	31 Jan 2017 05:30
Last Modified:	31 Jan 2017 05:30
URI:	http://eprints.iisc.ac.in/id/eprint/56124

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