Current crowding mediated large contact noise in graphene field-effect transistors

Karnatak, Paritosh and Sai, Phanindra T and Goswami, Srijit and Ghatak, Subhamoy and Kaushal, Sanjeev and Ghosh, Arindam (2016) Current crowding mediated large contact noise in graphene field-effect transistors. In: NATURE COMMUNICATIONS, 7 .

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Abstract

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field-effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000 cm(2)V(-1) s(-1). Our phenomenological model for contact noise because of current crowding in purely two-dimensional conductors confirms that the contacts dominate the measured resistance noise in all graphene field-effect transistors in the two-probe or invasive four-probe configurations, and surprisingly, also in nearly noninvasive four-probe (Hall bar) configuration in the high-mobility devices. The microscopic origin of contact noise is directly linked to the fluctuating electrostatic environment of the metal-channel interface, which could be generic to two-dimensional material-based electronic devices.

Item Type:	Journal Article
Publication:	NATURE COMMUNICATIONS
Additional Information:	Copy right for this article belongs to the NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics
Date Deposited:	07 Jan 2017 10:14
Last Modified:	07 Jan 2017 10:14
URI:	http://eprints.iisc.ac.in/id/eprint/55908

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