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Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics

Monteduro, Anna Grazia and Ameer, Zoobia and Rizzato, Silvia and Martino, Maurizio and Caricato, Anna Paola and Tasco, Vittorianna and Lekshmi, Indira Chaitanya and Hazarika, Abhijit and Choudhury, Debraj and Sarma, DD and Maruccio, Giuseppe (2016) Investigation of high-k yttrium copper titanate thin films as alternative gate dielectrics. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49 (40).

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Official URL: http://dx.doi.org/10.1088/0022-3727/49/40/405303


Nearly amorphous high-k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal-oxide-semiconductor (MOS) and metal-insulator-metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6 x 10(-10) S cm(-1) for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 03 Dec 2016 06:49
Last Modified: 03 Dec 2016 06:49
URI: http://eprints.iisc.ac.in/id/eprint/55331

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