Strain-induced phenomena in layered materials

Singh, Abhishek K and Manjanath, Aaditya and Samanta, Atanu and Pandey, Tribhuwan and Sharma, Babu Ram (2015) Strain-induced phenomena in layered materials. In: IEEE NANO 2015 15th INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, JUL 27-30, 2015, ROME, ITALY, pp. 1114-1117.

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Abstract

Using first principles density functional theory (DFT), we investigate the effect of normal compressive strain on the bilayers of MoS2, SnS2, and their van der Waals heterostructure. These materials and the corresponding heterostructure show a universal phenomenon of reversible semiconductor-metal (SM) transition under applied strain. Most interestingly, a van der Waals heterostructure of MoS2 and SnS2 is found to have an effective direct band gap of 0.71 eV at G-point. This inherent ease of tunability of electronic properties of these materials by applying strain or heterostructuring is expected to pave way for further fundamental research leading to multi-physics devices.

Item Type:	Conference Proceedings
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	03 Dec 2016 06:15
Last Modified:	03 Dec 2016 06:15
URI:	http://eprints.iisc.ac.in/id/eprint/55261

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