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Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2

Mandal, Suman and Pal, Somnath and Kundu, Asish K and Menon, Krishnakumar SR and Hazarika, Abhijit and Rioult, Maxime and Belkhou, Rachid (2016) Direct view at colossal permittivity in donor-acceptor (Nb, In) co-doped rutile TiO2. In: APPLIED PHYSICS LETTERS, 109 (9).

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Official URL: http://dx.doi.org/10.1063/1.4962219


Topical observations of colossal permittivity (CP) with low dielectric loss in donor-acceptor cations co-doped rutile TiO2 have opened up several possibilities in microelectronics and energy-storage devices. Yet, the precise origin of the CP behavior, knowledge of which is essential to empower the device integration suitably, is highly disputed in the literature. From spectromicroscopic approach besides dielectric measurements, we explore that microscopic electronic inhomogeneities along with the nano-scale phase boundaries and the low temperature polaronic relaxation are mostly responsible for such a dielectric behavior, rather than electron-pinned defect-dipoles/grain-boundary effects as usually proposed. Donor-acceptor co-doping results in a controlled carrier-hopping inevitably influencing the dielectric loss while invariably upholding the CP value. Published by AIP Publishing.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 03 Dec 2016 06:09
Last Modified: 03 Dec 2016 06:09
URI: http://eprints.iisc.ac.in/id/eprint/55254

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