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Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors

Padmanabhan, Revathy and Mohan, Sangeneni and Morozumi, Yuichiro and Kaushal, Sanjeev and Bhat, Navakanta (2016) Performance and Reliability of TiO2/ZrO2/TiO2 (TZT) and AlO-Doped TZT MIM Capacitors. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 63 (10). pp. 3928-3935.

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Official URL: http://dx.doi.org/10.1109/TED.2016.2601419


Metal-insulator-metal capacitors for dynamic random access memory applications have been realized using TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT TiO2/ZrO2/AlO/ZrO2/TiO2 (TZAZT) and TiO2/ZrO2/AlO/ZrO2/AlO/ZrO2/TiO2 (TZAZAZT)] dielectric stacks. High-capacitance densities of 46.6 fF/mu m(2) (for TZT stacks), 46.2 fF/mu m(2) (for TZAZT stacks), and 46.8 fF/mu m(2) (for TZAZAZT stacks) have been achieved. Low leakage current densities of about 4.9 x 10(-8), 5.5x10(-9), and 9.7x10(-9) A/cm(2) (at -1 V) have been obtained for TZT, TZAZT, and TZAZAZT stacks, respectively. We analyze the leakage current mechanisms at different electric field regimes, and compute the trap levels. The effects of constant voltage stress on the device characteristics were studied, and excellent device reliability was demonstrated. The electrical characteristics of the devices were correlated with the structural analysis through X-ray diffraction measurements and the surface chemical states analysis through X-ray photoelectron spectroscopy measurements. The doped-dielectric stacks (AlO-doped TZT: TZAZT and TZAZAZT) help to reduce leakage current density and improve reliability, without substantial reduction in capacitance density, compared with their undoped counterparts (TZT).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 03 Dec 2016 05:18
Last Modified: 03 Dec 2016 05:18
URI: http://eprints.iisc.ac.in/id/eprint/55242

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