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Microstructural and Compositional Characterisation of Electronic Materials

Rao, Sridhara DV and Sankarasubramanian, R and Kumar, Deepak and Singh, V and Bhat, Mahadeva K and Mishra, P and Vinayak, S and Srinivasan, T and Tyagi, R and Muraleedharan, K and Muralidharan, R and Banerjee, D (2016) Microstructural and Compositional Characterisation of Electronic Materials. In: DEFENCE SCIENCE JOURNAL, 66 (4, SI). pp. 341-352.

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Official URL: http://dx.doi.org/10.14429/dsj.66.10207


Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT) and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, in-situ SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the DEFENCE SCIENTIFIC INFORMATION DOCUMENTATION CENTRE, METCALFE HOUSE, DELHI 110054, INDIA
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 28 Oct 2016 07:24
Last Modified: 28 Oct 2016 07:24
URI: http://eprints.iisc.ac.in/id/eprint/55168

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