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Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon

Shamim, Saquib and Weber, Bent and Thompson, Daniel W and Simmons, Michelle Y and Ghosh, Arindam (2016) Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon. In: NANO LETTERS, 16 (9). pp. 5779-5784.

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Official URL: http://dx.doi.org/10.1021/acs.nanolett.6b02513


The atomically precise: doping of silicon with phosphorus (Si:P) using scanning tunneling microscopy (STM) promises ultimate miniaturization of field effect transistors. The one-dimensionaI (1D) Si:P nanowires :;are of particular interest, retaining exceptional conductivity down to the atomic scale, and are predicted as interconnects-for a scalable silicon-based quantum computer. Here, we show that ultrathin Si:P nanowires form one of the most-stable electrical conductors, with the phenomenological Hooge parameter of low-frequency noise-being as low as approximate to 10(-8) at 4.2 K, nearly 3-orders of magnitude lower than even carbon-nanotube-based 1D conductors. A in-built isolation from the-surface charge fluctuations due to encapsulation of the wires within the epitaxial-Si matrix is the dominant cause for the observed suppression of noise.-Apart from quantum information technology, Our results confirm the promising prospects for precision-doped Si:P structures in atomic-scale Circuitry for the 11 nm technology node and beyond.

Item Type: Journal Article
Publication: NANO LETTERS
Additional Information: Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Oct 2016 07:20
Last Modified: 28 Oct 2016 07:20
URI: http://eprints.iisc.ac.in/id/eprint/55156

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