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Thermoelectric properties of PbTe with indium and bismuth secondary phase

Bali, A and Chetty, R and Mallik, RC (2016) Thermoelectric properties of PbTe with indium and bismuth secondary phase. In: INDIAN JOURNAL OF PHYSICS, 90 (6). pp. 665-672.

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Official URL: http://dx.doi.org/10.1007/s12648-015-0793-6


Lead telluride ( PbTe) with indium ( In) and bismuth ( Bi) as micrometer sized secondary phases dispersed throughout the bulk has been prepared by matrix encapsulation method. In and Bi are not found to substitute in PbTe as shown by Rietveld and room temperature Raman studies but are present as secondary phases. Increased values of temperature dependent electrical resistivity and Seebeck coefficient show the effect of interfaces on electronic transport. As expected, thermal conductivity is found to reduce on addition of secondary phases due to a reduced electronic contribution, further confirming that electron scattering at interfaces is more important than phonon scattering in such systems for thermoelectric properties. However, due to the reduction in the power factor of the In and Bi added samples from that of the parent PbTe, the overall thermoelectric figure of merit ( zT) does not increase beyond that of PbTe, for which the highest value of 0.7 is obtained at 778 K.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the INDIAN ASSOC CULTIVATION SCIENCE, INDIAN J PHYSICS, JADAVPUR, KOLKATA 700 032, INDIA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 22 Oct 2016 10:24
Last Modified: 22 Oct 2016 10:24
URI: http://eprints.iisc.ac.in/id/eprint/55114

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