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Growth and characterization of Cu2ZnGeSe4 thin films by selenization of multiple stacks (Cu/Se/ZnSe/Se/Ge/Se) in high vacuum

Mary, Swapna G and Nagapure, Dipak Ramdas and Patil, Rhishikesh Mahadev and Chandra, Hema G and Sunil, Anantha M and Rao, Prasada R and Gupta, Mukul and Subbaiah, Venkata YP (2016) Growth and characterization of Cu2ZnGeSe4 thin films by selenization of multiple stacks (Cu/Se/ZnSe/Se/Ge/Se) in high vacuum. In: VACUUM, 131 . pp. 264-270.

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Official URL: http://dx.doi.org/10.1016/j.vacuum.2016.06.020


Multiple stacks of precursors (Cu/Se/ZnSe/Se/Ge/Se) are deposited by electron beam evaporation followed by selenization in high vacuum at substrate temperatures ranging from 350 degrees C - 500 degrees C for 30 min to achieve device quality Cu2ZnGeSe4 films. The effect of selenization temperature on the structural, morphological, compositional, optical and electrical properties of Cu2ZnGeSe4 films are studied and discussed systematically. The crystal structure of Cu2ZnGeSe4 thin films selenized at 450 degrees C is found to be tetragonal stannite with lattice parameters a = 5.592(1) angstrom and c = 11.057(5) angstrom. The energy dispersive spectroscopic studies revealed the presence of Cu-poor and Zn-rich Cu2ZnGeSe4 films. The secondary ion mass spectroscopic (SIMS) analysis has been carried out to know the distribution of constituent elements across the thickness and found to be fairly uniform. The micrographs of Cu2ZnGeSe4 films selenized at 450 degrees C showing perfectly packed rice shaped cylindrical grains. Raman spectra revealed the existence of a minor ZnSe binary phase along with Cu2ZnGeSe4 phase. The optical energy band gap of Cu2ZnGeSe4 films was found to be 1.6 eV and these films have p-type conductivity with electrical resistivity of 2.13 x 10(-3) Omega cm. (C) 2016 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Publication: VACUUM
Additional Information: Copy right for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 22 Oct 2016 10:15
Last Modified: 22 Oct 2016 10:15
URI: http://eprints.iisc.ac.in/id/eprint/55092

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