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Gas-Selective Signal Amplification in Fluctuation-Based Graphene FET Sensors

Dana, Saswati and Varma, Manoj M (2016) Gas-Selective Signal Amplification in Fluctuation-Based Graphene FET Sensors. In: IEEE SENSORS JOURNAL, 16 (17). pp. 6533-6536.

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Official URL: http://dx.doi.org/10.1109/JSEN.2016.2585739


The power spectrum of conductance fluctuations arising from the adsorption of gas molecules to a graphene field-effect transistor was shown to contain the signature of the adsorbing species recently. A detailed mechanism of the phenomena was not provided although it was remarked that these conductance fluctuations arise due to the number fluctuations of the adsorbed molecules, which may donate (or accept) electrons to (or from) graphene. In this paper, we report on a phenomenological model based on conductance fluctuations and analyze a novel sensing configuration consisting of a sinusoidally varying gate voltage sweeping across the Dirac point, which changes the sign of conductance response to adsorption. We show that this configuration leads to gas-selective amplification of peaks of the conductance fluctuation spectra.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Division of Interdisciplinary Sciences > Robert Bosch Centre for Cyber Physical Systems
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 28 Oct 2016 06:52
Last Modified: 28 Dec 2018 17:13
URI: http://eprints.iisc.ac.in/id/eprint/55005

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