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An Integrated X-band FMCW Radar Transceiver in 130-nm CMOS Technology

Chowdary, Aditya T and Banerjee, Gaurab (2015) An Integrated X-band FMCW Radar Transceiver in 130-nm CMOS Technology. In: IEEE International Microwave and RF Conference, DEC 10-12, 2015, Hyderabad, INDIA, pp. 151-154.

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A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 x 716 mu m(2).

Item Type: Conference Proceedings
Series.: IEEE MTT-S International Microwave and RF Conference
Additional Information: Copy right of this article belongs to the IEEE
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 08 Oct 2016 06:39
Last Modified: 12 Oct 2018 15:23
URI: http://eprints.iisc.ac.in/id/eprint/54779

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