Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Kaushik, JK and Balakrishnan, VR and Mongia, D and Kumar, U and Dayal, S and Panwar, BS and Muralidharan, R (2016) Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors. In: THIN SOLID FILMS, 612 . pp. 147-152.

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Abstract

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si3N4 passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si3N4/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si3N4/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si3N4 deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. (C) 2016 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	THIN SOLID FILMS
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	22 Oct 2016 06:38
Last Modified:	22 Oct 2016 06:38
URI:	http://eprints.iisc.ac.in/id/eprint/54656

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