Yadav, Anil K and Majhi, Kunjalata and Banerjee, Abhishek and Devi, Poonam and Ganesan, R and Mishra, P and Lohani, H and Sekhar, BR and Kumar, Anil PS (2016) Growth of High Quality Single Crystals of Bi2Se3 Topological Insulator via Solid State Reaction Method. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.
Full text not available from this repository. (Request a copy)Abstract
Recently discovered, Topological Insulators (TIs) have garnered enormous amount of attention owing to its unique surface properties which has potential applications in the field of spintronics and other modern technologies. For all this, it should require a very good quality samples. There are a number of techniques suggested by people for the growth of good quality TIs. Here, we are reporting the growth of high quality single crystals of Bi2Se3 (a TI) by slow cooling solid-state reaction method. X-ray diffraction measurements performed on a cleaved flake of single crystal Bi2Se3 showed up with proper orientations of the crystal planes. High energy X-ray diffraction has been performed to confirm the stoichiometry of the compound and also recorded Laue patterns prove the single crystalline nature of Bi2Se3. Moreover, angle resolved photo-emission spectroscopy (ARPES) carried out on a flat crystal flake shows distinct Dirac dispersion of surface bands at the gamma point clarifying it as a 3D topological insulator.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | AIP Conference Proceedings |
| Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 30 Aug 2016 09:45 |
| Last Modified: | 30 Aug 2016 09:45 |
| URI: | http://eprints.iisc.ac.in/id/eprint/54529 |
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