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Doping Dependent Charge Transport in Poly(3-methylthiophene) Based Devices

Khan, Motiur Rahman and Menon, R and Rao, Koteswara KSR (2016) Doping Dependent Charge Transport in Poly(3-methylthiophene) Based Devices. In: DAE Solid State Physics Symposium, DEC 21-25, 2015, Amity Univ, Noida, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.4948086


Doping dependent current-voltage measurements have been performed on poly(3-methylthiophene) based devices in metal/polymer/metal geometry in temperature range 90-300 K. In low doped device, space charge limited current (SCLC) controlled by exponentially distributed traps is observed at all the measured temperatures. Trap density and characteristic energy are found to be 2x10(15) cm(-3) and 29.7 meV respectively. In case of moderately doped device, similar trend is observed with trap density and characteristic energy as 5x10(14) cm(-3) and 15.5 meV respectively. The high values of trap parameters are attributed to the more disorder in less doped device. A transition from trap-controlled to trap-free SCLC is observed in highly doped device. The plausible reasons for the origin of disorder and the transition in the transport mechanism with doping are discussed.

Item Type: Conference Proceedings
Series.: AIP Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Aug 2016 10:14
Last Modified: 30 Aug 2016 10:14
URI: http://eprints.iisc.ac.in/id/eprint/54524

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