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Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy

Chirakkara, Saraswathi and Choudhury, Palash Roy and Nanda, KK and Krupanidhi, SB (2016) Understanding Pt-ZnO:In Schottky nanocontacts by conductive atomic force microscopy. In: MATERIALS RESEARCH EXPRESS, 3 (4).

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Official URL: http://dx.doi.org/10.1088/2053-1591/3/4/045023


Undoped and In doped ZnO (IZO) thin films are grown on Pt coated silicon substrates Pt/Si by pulsed laser deposition to fabricate Pt/ZnO:In Schottky diodes. The Schottky diodes were investigated by conventional two-probe current-voltage (I-V) measurements and by the I-V spectroscopy tool of conductive atomic force microscopy (C-AFM). The large deviation of the ideality factor from unity and the temperature dependent Schottky barrier heights (SBHs) obtained from the conventional method imply the presence of inhomogeneous interfaces. The inhomogeneity of SBHs is confirmed by C-AFM. Interestingly, the I-V curves at different points are found to be different, and the SBHs deduced from the point diodes reveal inhomogeneity at the nanoscale at the metal-semiconductor interface. A reduction in SBH and turn-on voltage along with enhancement in forward current are observed with increasing indium concentration.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: pulsed laser deposition; metal-semiconductor interface; conductive atomic force microscopy; I-V curves; Schottky barrier height; indium doped ZnO
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 19 Jul 2016 10:10
Last Modified: 19 Jul 2016 10:10
URI: http://eprints.iisc.ac.in/id/eprint/54207

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