Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates

Yin, Xinmao and Zeng, Shengwei and Das, Tanmoy and Baskaran, G and Asmara, Teguh Citra and Santoso, Iman and Yu, Xiaojiang and Diao, Caozheng and Yang, Ping and Breese, Mark BH and Venkatesan, T and Lin, Hsin and Ariando, * and Rusydi, Andrivo (2016) Coexistence of Midgap Antiferromagnetic and Mott States in Undoped, Hole- and Electron-Doped Ambipolar Cuprates. In: PHYSICAL REVIEW LETTERS, 116 (19).

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Abstract

We report the first observation of the coexistence of a distinct midgap state and a Mott state in undoped and their evolution in electron and hole-doped ambipolar Y(0.38)La(0.62)dBa(0.82)La(0.18))(2)Cu3Oy films using spectroscopic ellipsometry and x-ray absorption spectroscopies at the O K and Cu L-3,L-2 edges. Supported by theoretical calculations, the midgap state is shown to originate from antiferromagnetic correlation. Surprisingly, while the magnetic state collapses and its correlation strength weakens with dopings, the Mott state in contrast moves toward a higher energy and its correlation strength increases. Our result provides important clues to the mechanism of electronic correlation strengths and superconductivity in cuprates.

Item Type:	Journal Article
Publication:	PHYSICAL REVIEW LETTERS
Publisher:	AMER PHYSICAL SOC
Additional Information:	Copy right for this article belongs to the AMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Jun 2016 07:33
Last Modified:	16 Jun 2016 07:33
URI:	http://eprints.iisc.ac.in/id/eprint/54003

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