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Gibbs energy of formation of bismuth(III) oxide

Jacob, KT and Mansoor, Amal K (2016) Gibbs energy of formation of bismuth(III) oxide. In: THERMOCHIMICA ACTA, 630 . pp. 90-96.

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Official URL: http://dx.doi.org/10.1016/j.tca.2016.02.006


The standard Gibbs energy of formation of Bi2O3 has been measured using a solid-state cell incorporating yttria-stabilized zirconia as the electrolyte and pure oxygen as the reference electrode. An innovative cell design, with a buffer electrode to absorb the electrochemical flux of oxygen through the electrolyte caused by trace electron/hole conduction, was used to measure the oxygen chemical potential over phase mixture Bi + Bi2O3 in the temperature range from 800 to 1473 K. A closed cell was used to avoid possible deviations from equilibrium caused by vaporization of bismuth and oxides of bismuth. The results for alpha-Bi2O3 in the temperature range from 800 to 1002 K can be summarized by, Delta G(f)(o) (+/- 230)/J mol(-1) = -584235 + 289.28(T/K) For delta-Bi2O3 in the temperature range from 1002 to 1078 K: Delta G(f)(o) (+/- 230)/J mol(-1) = -553669 + 258.77(T/K) The results are discussed in relation to thermodynamic information reported in the literature. (C) 2016 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to theELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,NETHERLANDS
Keywords: Bismuth(III) oxide; Solid-state electrochemical cell; Thermodynamic properties; Gibbs energy; Enthalpy of formation; Thermochemical table; Electrochemical calorimetry
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 11 Jun 2016 06:18
Last Modified: 11 Jun 2016 06:18
URI: http://eprints.iisc.ac.in/id/eprint/53898

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