Shetty, Arjun and Kumar, Mahesh and Roul, Basanta and Vinoy, KJ and Krupanidhi, SB (2016) InN Quantum Dot Based Infra-Red Photodetectors. In: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 16 (1). pp. 709-714.
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Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithography steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.
| Item Type: | Journal Article |
|---|---|
| Publication: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
| Publisher: | AMER SCIENTIFIC PUBLISHERS |
| Additional Information: | Copy right for this article belongs to the AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA |
| Keywords: | Indium Nitride; Quantum Dots; IR Photodetector; Molecular Beam Epitaxy |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 02 Apr 2016 10:40 |
| Last Modified: | 02 Apr 2016 10:40 |
| URI: | http://eprints.iisc.ac.in/id/eprint/53497 |
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