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Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Dias, Sandra and Krupanidhi, SB (2016) Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy. In: MATERIALS RESEARCH EXPRESS, 2 (6).

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Official URL: http://dx.doi.org/10.1088/2053-1591/2/6/065901


Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: Cu2SnS3; x-ray photoelectron spectroscopy; band offset; type-II misaligned heterostructure
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 26 Mar 2016 05:45
Last Modified: 26 Mar 2016 05:45
URI: http://eprints.iisc.ac.in/id/eprint/53428

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