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Detection of quantum well induced single degenerate-transition-dipoles in ZnO nanorods

Ghosh, Siddharth and Ghosh, Moumita and Seibt, Michael and Rao, Mohan G (2016) Detection of quantum well induced single degenerate-transition-dipoles in ZnO nanorods. In: NANOSCALE, 8 (5). pp. 2632-2638.

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Official URL: http://dx.doi.org/10.1039/c5nr06722g

Abstract

Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission patterns from optical imaging with a multi-dimensional dipole and find that the experimentally observed dipole pattern and model-calculated patterns are in excellent agreement. This agreement suggests the presence of vertically oriented degenerate-transition-dipoles in vertically aligned ZnO nanorods. The HRTEM of the ZnO nanorod shows the presence of a stacking fault, which generates a localised quantum well induced degenerate-transition-dipole. Finally, we elucidate that defocused wide-field imaging can be widely used to characterise defects in nanomaterials to answer many difficult questions concerning the performance of low-dimensional devices, such as in energy harvesting, advanced metal-oxide-semiconductor storage, and nanoelectromechanical and nanophotonic devices.

Item Type: Journal Article
Publication: NANOSCALE
Publisher: ROYAL SOC CHEMISTRY
Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 02 Apr 2016 05:16
Last Modified: 02 Apr 2016 05:16
URI: http://eprints.iisc.ac.in/id/eprint/53416

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