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Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique

Santra, Sangeeta and Paul, Aloke (2016) Effect of Ga content in Cu(Ga) on the growth of V3Ga following bronze technique. In: INTERMETALLICS, 70 . pp. 1-6.

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Official URL: http://dx.doi.org/10.1016/j.intermet.2015.11.004


Diffusion controlled growth rate of V3Ga in the Cu(Ga)/V system changes dramatically because of a small change in Ga content in Cu(Ga). One atomic percent increase from 15 to 16 leads to more than double the product phase layer thickness and a decrease in activation energy from 255 to 142 kJ/mol. Kirkendall marker experiment indicates that V3Ga grows because of diffusion of Ga. Role of different factors influencing the diffusion rate of Ga and high growth rate of V3Ga are discussed. (C) 2015 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Keywords: Diffusion; Grain boundary; Intermetallics; Orientation
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 29 Feb 2016 05:49
Last Modified: 29 Feb 2016 05:49
URI: http://eprints.iisc.ac.in/id/eprint/53298

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