Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene

Kochat, Vidya and Tiwary, Chandra Sekhar and Biswas, Tathagata and Ramalingam, Gopalakrishnan and Hsieh, Kimberly and Chattopadhyay, Kamanio and Raghavan, Srinivasan and Jain, Manish and Ghosh, Arindam (2016) Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene. In: NANO LETTERS, 16 (1). pp. 562-567.

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Abstract

Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device quality and their electronic performance. Here we show that the grain boundaries in graphene which induce additional scattering of carriers in the conduction channel also act as an additional and strong source of electrical noise especially at the room temperature. From graphene field effect transistors consisting of single GB, we find that the electrical noise across the graphene GBs can be nearly 10 000 times larger than the noise from equivalent dimensions in single crystalline graphene. At high carrier densities (n), the noise magnitude across the GBs decreases as proportional to 1/n, suggesting Hooge-type mobility fluctuations, whereas at low n close to the Dirac point, the noise magnitude could be quantitatively described by the fluctuations in the number of propagating modes across the GB.

Item Type:	Journal Article
Publication:	NANO LETTERS
Publisher:	AMER CHEMICAL SOC
Additional Information:	Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Keywords:	CVD graphene; grain boundary; 1/f noise; Hooge model; transmission probability
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics
Date Deposited:	17 Feb 2016 05:29
Last Modified:	17 Feb 2016 05:29
URI:	http://eprints.iisc.ac.in/id/eprint/53240

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