Mukundan, Shruti and Roul, Basanta and Shetty, Arjun and Chandan, Greeshma and Mohan, Lokesh and Krupanidhi, SB (2015) Enhanced UV detection by non-polar epitaxial GaN films. In: AIP ADVANCES, 5 (12).
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Abstract
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of the grown film. Effect of the Ga/N ratio on the morphology and strain of a-GaN epilayers was compared and the best condition was obtained for the nitrogen flow of 1 sccm. Atomic force microscopy was used to analyze the surface morphology while the strain in the film was quantitatively measured using Raman spectroscopy and qualitatively analyzed by reciprocal space mapping technique. UV photo response of a-GaN film was measured after fabricating a metal-semiconductor-metal structure over the film with gold metal. The external quantum efficiency of the photodetectors fabricated in the (0002) polar and (11-20) nonpolar growth directions were compared in terms of responsivity and nonpolar GaN showed the best sensitivity at the cost of comparatively slow response time. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
| Item Type: | Journal Article |
|---|---|
| Publication: | AIP ADVANCES |
| Publisher: | AMER INST PHYSICS |
| Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Electrical Sciences > Electrical Communication Engineering |
| Date Deposited: | 10 Feb 2016 06:06 |
| Last Modified: | 10 Feb 2016 06:06 |
| URI: | http://eprints.iisc.ac.in/id/eprint/53207 |
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