Raj, Justin C and Paramesh, G and Prakash, Shri B and Meher, Preethi KRS and Varma, KBR (2016) Origin of giant dielectric constant and conductivity behavior in Zn1-xMgxO (0 <= x <= 0.1) ceramics. In: MATERIALS RESEARCH BULLETIN, 74 . pp. 1-8.
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Abstract
Zn1-xMgxO ( <= x <= 0.1) ceramics were fabricated by conventional solid-state reaction of co-precipitated zinc oxide and magnesium hydroxide nanoparticles. Structural and morphological properties of the fabricated ceramics were studied using X-ray diffraction and scanning electron microscopic analysis. The dielectric measurements of the ceramics were carried out as a function of frequency and temperature respectively. Interestingly, Mg doped ZnO (MZO) samples exhibited colossal dielectric response (similar to 1 x 10(4) at 1 kHz) with Debye like relaxation. The detailed dielectric studies and thermal analyses showed that the unusual dielectric response of the samples were originated from the defected grain and grain boundary (GB) conductivity relaxations due to the absorbed atmospheric water vapor (moisture). Impedance spectroscopy was employed to determine the defected grain and GB resistances, capacitances and which supported Maxwell-Wagner type relaxation phenomena. (C) 2015 Elsevier Ltd. All rights reserved.
Item Type: | Journal Article |
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Publication: | MATERIALS RESEARCH BULLETIN |
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD |
Additional Information: | Copy right for this article belongs to the PERGAMON-ELSEVIER SCIENCE LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND |
Keywords: | Semiconductors; Ceramics; X-ray Diffraction; Impedance Spectroscopy; Dielectric Properties |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 10 Feb 2016 06:08 |
Last Modified: | 10 Feb 2016 06:08 |
URI: | http://eprints.iisc.ac.in/id/eprint/53193 |
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