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High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method

Kumar, Arvind and Mondal, Sandip and Rao, Koteswara KSR (2015) High-kappa TiO2 Thin Film Prepared by Sol-Gel Spin-Coating Method. In: 59th DAE Solid State Physics Symposium, DEC 16-20, 2014, VIT Univ, Vellore, INDIA.

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Official URL: http://dx.doi.org/10.1063/1.4917919


High-k TiO2 thin film on p-type silicon substrate was fabricated by a combined sol-gel and spin coating method. Thus deposited titania film had anatase phase with a small grain size of 16 nm and surface roughness of congruent to 0.6 nm. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), oxide trapped charge (Q(ot)), calculated from the high frequency (1 MHz) C-V curve were 0.47 nF, 0.16 nF, -0.91 V, 4.7x10(-12) C, respectively. As compared to the previous reports, a high dielectric constant of 94 at 1 MHz frequency was observed in the devices investigated here and an equivalent oxide thickness (EOT) was 4.1 nm. Dispersion in accumulation capacitance shows a linear relationship with AC frequencies. Leakage current density was found in acceptable limits (2.1e-5 A/cm(2) for -1 V and 5.7e-7 A/cm(2) for +1 V) for CMOS applications.

Item Type: Conference Proceedings
Series.: AIP Conference Proceedings
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Keywords: TiO2; MOS; Thin Films; Sol-Gel; Spin-coating; High-k
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Jan 2016 06:24
Last Modified: 27 Jan 2016 06:24
URI: http://eprints.iisc.ac.in/id/eprint/53189

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