Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE

Mukundan, Shruti and Chandan, Greeshma and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2016) Structural and optical characterization of nonpolar (10-10) m-InN/m-GaN epilayers grown by PAMBE. In: JOURNAL OF CRYSTAL GROWTH, 433 . pp. 74-79.

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Abstract

Plasma-assisted molecular beam epitaxy growth of (10-10) m-InN/(10-10) m-GaN was carried out on bare (10-10) m-sapphire substrate. The high resolution X-ray diffraction studies confirmed the orientation of the as-grown films. Nonpolar InN layer was grown at different growth temperatures ranging from 390 degrees C to 440 degrees C and the FWHM of rocking curve revealed good quality film at low temperatures. An in-plane relationship was established for the hetrostructures using phi-scan and a perfect alignment was found for the epilayers. Change of morphology of the films grown at different temperatures was observed using an atomic force microscopy technique showing the smoothest film grown at 400 degrees C. InN optical band gap was found to be vary from 0.79-0.83 eV from absorption spectra. The blue-shift of absorption edge was found to be induced by excess background electron concentration. (C) 2015 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	JOURNAL OF CRYSTAL GROWTH
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords:	Atomic force microscopy; High resolution X-ray diffraction; Molecular beam epitaxy; Nitrides; Semiconducting III-V materials
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	30 Dec 2015 05:59
Last Modified:	30 Dec 2015 05:59
URI:	http://eprints.iisc.ac.in/id/eprint/52931

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