Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications

Malligavathy, M and Kumar, AnanthRT and Das, Chandasree and Asokan, S and Padiyan, Pathinettam D (2015) Growth and characteristics of amorphous Sb2Se3 thin films of various thicknesses for memory switching applications. In: JOURNAL OF NON-CRYSTALLINE SOLIDS, 429 . pp. 93-97.

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Abstract

Thin films of different thicknesses in the range of 200-720 nm have been deposited on glass substrates at room temperature using thermal evaporation technique. The structural investigations revealed that the as-deposited films are amorphous in nature. The surface roughness of the films shows an increasing trend at higher thickness of the films. The surface roughness of the films shows an increasing trend at higher thickness of the films. Interference fringes in the transmission spectra of these films suggest that the films are fairly smooth and uniform. The optical absorption in Sb2Se3 film is described using indirect transition and the variation in band gaps is explained on the basis of defects and disorders in the chalcogenide systems. Raman spectrum confirms the increase of orderliness with film thickness. From the I-V characteristics, a memory type switching is observed whose threshold voltage increases with film thickness. (C) 2015 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	JOURNAL OF NON-CRYSTALLINE SOLIDS
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords:	Chalcogenide glasses; Thermal evaporation; X-ray diffraction; Optical properties; Raman spectrum; Memory switching
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	15 Dec 2015 07:47
Last Modified:	15 Dec 2015 07:47
URI:	http://eprints.iisc.ac.in/id/eprint/52907

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