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Transport properties of solution processed Cu2SnS3/AZnO heterostructure for low cost photovoltaics

Dias, Sandra and Murali, Banavoth and Krupanidhi, SB (2015) Transport properties of solution processed Cu2SnS3/AZnO heterostructure for low cost photovoltaics. In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, 143 (SI). pp. 152-158.

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Official URL: http://dx.doi.org/10.1016/j.solmat.2015.06.046


Cu2SnS3 thin films were deposited by a facile sot-gel technique followed by annealing. The annealed films were structurally characterized by grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). The crystal structure was found to be tetragonal with crystallite sizes of 2.4-3 nm. Texture coefficient calculations from the GIXRD revealed the preferential orientation of the film along the (112) plane. The morphological investigations of the films were carried out using field emission scanning electron microscopy (FESEM) and the composition using electron dispersive spectroscopy (EDS). The temperature dependent current, voltage characteristics of the Cu2SnS3/AZnO heterostructure were studied. The log I-log V plot exhibited three regions of different slopes showing linear ohmic behavior and non-linear behavior following the power law. The temperature dependent current voltage characteristics revealed the variation in ideality factor and barrier height with temperature. The Richardson constant was calculated and its deviation from the theoretical value revealed the inhomogeneity of the barrier heights. Transport characteristics were modeled using the thermionic emission model. The Gaussian distribution of barrier heights was applied and from the modified Richardson plot the value of the Richardson constant was found to be 47.18 A cm(-2) K-2. (c) 2015 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords: Cu2SnS3; Al doped ZnO; Transport properties; Barrier height; Ideality factor
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 15 Dec 2015 07:44
Last Modified: 30 Dec 2015 07:55
URI: http://eprints.iisc.ac.in/id/eprint/52863

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