High-Performance Stacked TiO2-ZrO2 and Si-doped ZrO2 Metal-Insulator-Metal Capacitors

Padmanabhan, Revathy and Bhat, Navakanta and Mohan, S and Morozumi, Yuichiro and Kaushal, Sanjeev (2014) High-Performance Stacked TiO2-ZrO2 and Si-doped ZrO2 Metal-Insulator-Metal Capacitors. In: IEEE International Conference on IC Design & Technology (ICICDT), MAY 28-30, 2014, Adv Micro Devices Austin Lone Star Campus, Austin, TX.

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Abstract

Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-ZrO2 (TiO2/ZrO2 and ZrO2/TiO2) and Si-doped ZrO2 (TiO2/Si-doped ZrO2) dielectrics. High capacitance densities (> 42 fF/mu m(2)), low leakage current densities (< 5 x 10(-7) A/cm(2) at -1 V), and sub-nm EOT (< 0.8 nm) have been achieved. The effects of constant voltage stress on the device characteristics is studied. The structural analysis of the samples is performed by X-ray diffraction measurements, and this is correlated to the electrical characteristics of the devices. The surface chemical states of the films are analyzed through X-ray photoelectron spectroscopy measurements. The doped-dielectric stack (TiO2/Si-doped ZrO2) helps to reduce leakage current density and improve reliability, with a marginal reduction in capacitance density; compared to their undoped counterparts (TiO2/ZrO2 and ZrO2/TiO2). We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.

Item Type:	Conference Proceedings
Publisher:	IEEE
Additional Information:	Copy right of this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Keywords:	constant voltage stress (CVS); equivalent oxide thickness (EOT); metal-insulator-metal (MIM) capacitor; reliability; titanium oxide (TiO2); zirconium oxide (ZrO2)
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	26 Aug 2015 07:20
Last Modified:	26 Aug 2015 07:20
URI:	http://eprints.iisc.ac.in/id/eprint/52262

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