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Excitation- and power-dependent photoluminescence from oxidized Ge

Shinde, Satish Laxman and Nanda, Karuna Kar (2013) Excitation- and power-dependent photoluminescence from oxidized Ge. In: MATERIALS LETTERS, 101 . pp. 5-8.

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Official URL: http://dx.doi.org/10.1016/j.matlet.2013.03.054


Wafer/microcrystallites of oxidized Ge with holes/nanoholes synthesized by thermal oxidation strategy from Ge wafer/microcrystallites can convert one wavelength to another. Both oxidized Ge wafer and microcrystallites shows excitation- and power-dependent luminescence. Red-shift is observed as the excitation wavelength is increased, while blue-shift is observed as power density is increased. Over all, blue-green-yellow-orange luminescence is observed depending on the excitation wavelength and the morphology of oxidized Ge. The various defects level associated with germanium-oxygen vacancies in GeO2 and Ge/GeO2 interface are responsible for the excitation-dependent luminescence. Being a light-conversion material, oxidized Ge is expected to find potential applications in solid-state lighting, photovoltaic devices and photocatalysis. (C) 2013 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords: Excitation-dependent photoluminescence; GeO2; Nanoholes; Porous materials; Luminescence
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 14 Aug 2015 09:51
Last Modified: 14 Aug 2015 09:51
URI: http://eprints.iisc.ac.in/id/eprint/52133

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