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Dopant-configuration controlled carrier scattering in graphene

Anand, Benoy and Karakaya, Mehmet and Prakash, Gyan and Sai, Siva Sankara S and Philip, Reji and Ayala, Paola and Srivastava, Anurag and Sood, Ajay K and Rao, Apparao M and Podila, Ramakrishna (2015) Dopant-configuration controlled carrier scattering in graphene. In: RSC ADVANCES, 5 (73). pp. 59556-59563.

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Official URL: http://dx.doi.org/10.1039/c5ra05338b


Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).

Item Type: Journal Article
Publication: RSC ADVANCES
Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Aug 2015 09:34
Last Modified: 06 Oct 2018 13:49
URI: http://eprints.iisc.ac.in/id/eprint/52090

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