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Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

Chandan, Greeshma and Mukundan, Shruti and Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2015) Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias. In: JOURNAL OF APPLIED PHYSICS, 118 (2).

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Official URL: http://dx.doi.org/10.1063/1.4926480


n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device. (c) 2015 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 11 Aug 2015 06:53
Last Modified: 11 Aug 2015 06:53
URI: http://eprints.iisc.ac.in/id/eprint/52063

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