Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

Prasad, KNN and Das, Chandasree and Rukmani, K and Asokan, S (2015) Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study. In: ACTA PHYSICA POLONICA A, 127 (6). pp. 1666-1670.

PDF Act_Phy_Pol_A_127-6_1666_2015.pdf - Published Version Restricted to Registered users only Download (465kB) | Request a copy

Abstract

The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 <= x <= 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.

Item Type:	Journal Article
Publication:	ACTA PHYSICA POLONICA A
Publisher:	POLISH ACAD SCIENCES INST PHYSICS
Additional Information:	Copy right for this article belongs to the POLISH ACAD SCIENCES INST PHYSICS, AL LOTNIKOW 32-46, PL-02-668 WARSAW, POLAND
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	31 Jul 2015 05:24
Last Modified:	31 Jul 2015 05:24
URI:	http://eprints.iisc.ac.in/id/eprint/51921

Actions (login required)

View Item