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Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

Javvaji, Brahmanandam and Ajmalghan, M and Mahapatra, Roy D and Rahman, MR and Hegde, GM (2015) Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene. In: 23rd SPIE Conference on Physics and Simulation of Optoelectronic Devices held at the Photonics West Symposium, FEB 09-12, 2015, San Francisco, CA.

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Official URL: http://dx.doi.org/ 10.1117/12.2084796


Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

Item Type: Conference Proceedings
Series.: Proceedings of SPIE
Additional Information: Copy right for this article belongs to the SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
Keywords: Graphene; silicon; defects; electronic band structure; density of states; bandgap; optical conductivity
Department/Centre: Division of Mechanical Sciences > Aerospace Engineering(Formerly Aeronautical Engineering)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 22 Jun 2015 07:06
Last Modified: 22 Jun 2015 07:06
URI: http://eprints.iisc.ac.in/id/eprint/51745

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