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A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2

Kumar, Kranthi V and Dhar, Sukanya and Choudhury, Tanushree H and Shivashankar, SA and Raghavan, Srinivasan (2015) A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2. In: NANOSCALE, 7 (17). pp. 7802-7810.

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Official URL: http://dx.doi.org/ 10.1039/c4nr07080a


Layered transition metal dichalcogenides (TMDs), such as MoS2, are candidate materials for next generation 2-D electronic and optoelectronic devices. The ability to grow uniform, crystalline, atomic layers over large areas is the key to developing such technology. We report a chemical vapor deposition (CVD) technique which yields n-layered MoS2 on a variety of substrates. A generic approach suitable to all TMDs, involving thermodynamic modeling to identify the appropriate CVD process window, and quantitative control of the vapor phase supersaturation, is demonstrated. All reactant sources in our method are outside the growth chamber, a significant improvement over vapor-based methods for atomic layers reported to date. The as-deposited layers are p-type, due to Mo deficiency, with field effect and Hall hole mobilities of up to 2.4 cm(2) V-1 s(-1) and 44 cm(2) V-1 s(-1) respectively. These are among the best reported yet for CVD MoS2.

Item Type: Journal Article
Publication: NANOSCALE
Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 15 Jun 2015 09:34
Last Modified: 15 Jun 2015 09:34
URI: http://eprints.iisc.ac.in/id/eprint/51669

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