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Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET

Sengupta, Amretashis and Chanana, Anuja and Mahapatra, Santanu (2015) Phonon scattering limited performance of monolayer MoS2 and WSe2 n-MOSFET. In: AIP ADVANCES, 5 (2).

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Official URL: http://dx.doi.org/10.1063/1.4907697


In this paper we show the effect of electron-phonon scattering on the performance of monolayer (1L) MoS2 and WSe2 channel based n-MOSFETs. Electronic properties of the channel materials are evaluated using the local density approximation (LDA) in density functional theory (DFT). For phonon dispersion we employ the small displacement / frozen phonon calculations in DFT. Thereafter using the non-equilibrium Green's function (NEGF) formalism, we study the effect of electron-phonon scattering and the contribution of various phonon modes on the performance of such devices. It is found that the performance of the WSe2 device is less impacted by phonon scattering, showing a ballisticity of 83% for 1L-WSe2 FET for channel length of 10 nm. Though 1L-MoS2 FET of similar dimension shows a lesser ballisticity of 75%. Also in the presence of scattering there exist a a 21-36% increase in the intrinsic delay time (tau) and a 10-18% reduction in peak transconductance (g(m)) for WSe2 and MoS2 devices respectively. (C) 2015 Author(s).

Item Type: Journal Article
Publication: AIP ADVANCES
Additional Information: Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 21 Apr 2015 06:58
Last Modified: 21 Apr 2015 06:58
URI: http://eprints.iisc.ac.in/id/eprint/51306

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