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Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

Naik, Ramakanta and Jena, Shuvendu and Ganesan, R and Sahoo, NK (2015) Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination. In: LASER PHYSICS, 25 (3).

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Official URL: http://dx.doi.org/10.1088/1054-660X/25/3/036001


The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photooxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

Item Type: Journal Article
Publication: LASER PHYSICS
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Keywords: chalcogenide; thin film; optical properties; FTIR; XPS
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 Apr 2015 11:27
Last Modified: 20 Apr 2015 11:27
URI: http://eprints.iisc.ac.in/id/eprint/51300

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