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Origin of 1/f noise in graphene produced for large-scale applications in electronics

Kochat, Vidya and Sahoo, Anindita and Pal, Atindra Nath and Eashwer, Sneha and Ramalingam, Gopalakrishnan and Sampathkumar, Arjun and Tero, Ryugu and Thu, Tran Viet and Kaushal, Sanjeev and Okada, Hiroshi and Sandhu, Adarsh and Raghavan, Srinivasan and Ghosh, Arindam (2015) Origin of 1/f noise in graphene produced for large-scale applications in electronics. In: IET CIRCUITS DEVICES & SYSTEMS, 9 (1, SI). pp. 52-58.

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Official URL: http://dx.doi.org/ 10.1049/iet-cds.2014.0069

Abstract

The authors report a detailed investigation of the flicker noise (1/f noise) in graphene films obtained from chemical vapour deposition (CVD) and chemical reduction of graphene oxide. The authors find that in the case of polycrystalline graphene films grown by CVD, the grain boundaries and other structural defects are the dominant source of noise by acting as charged trap centres resulting in huge increase in noise as compared with that of exfoliated graphene. A study of the kinetics of defects in hydrazine-reduced graphene oxide (RGO) films as a function of the extent of reduction showed that for longer hydrazine treatment time strong localised crystal defects are introduced in RGO, whereas the RGO with shorter hydrazine treatment showed the presence of large number of mobile defects leading to higher noise amplitude.

Item Type: Journal Article
Publication: IET CIRCUITS DEVICES & SYSTEMS
Publisher: INST ENGINEERING TECHNOLOGY-IET
Additional Information: Copy right for this article belongs to the INST ENGINEERING TECHNOLOGY-IET, MICHAEL FARADAY HOUSE SIX HILLS WAY STEVENAGE, HERTFORD SG1 2AY, ENGLAND
Keywords: graphene; 1; f noise; flicker noise; chemical vapour deposition; 1-f noise; large-scale applications; flicker noise; graphene films; chemical vapour deposition; CVD; chemical reduction; electronics; polycrystalline graphene films; structural defects; charged trap centres; exfoliated graphene; hydrazine-reduced graphene oxide films; RGO oxide films; localised crystal defects; hydrazine treatment; mobile defects; noise amplitude
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 01 Apr 2015 12:11
Last Modified: 01 Apr 2015 12:11
URI: http://eprints.iisc.ac.in/id/eprint/51146

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