Rao, Rashmi B and Bhat, Navakanta and Sikdar, SK (2014) Thick PECVD Germanium films for MEMS Application. In: 17th International Workshop on the Physics of Semiconductor Devices (IWPSD, DEC 10-14, 2013, Noida, INDIA, pp. 469-471.
Full text not available from this repository. (Request a copy)Abstract
Plasma enhanced chemical vapour deposition (PECVD) of thick germanium (Ge) films (similar to 1 mu m) on silicon dioxide (SiO2) at low temperatures is described. A diborane pretreatment on SiO2 films is done to seed the Ge growth, followed by the deposition of thick Ge films using germane (GeH4) and argon (Ar). Further, the effect of hydrogen (H-2) dilution on the deposition rate is also investigated. The film thickness and morphology is characterized using SEM. Use of high RF power and substrate temperature show increased deposition rate. EDS analysis indicates that these films contain 97-98 atomic percentage of Ge. A recipe for anisotropic dry etching of the deposited Ge films with 10nm/ min etch rate is also suggested.
| Item Type: | Conference Proceedings |
|---|---|
| Series.: | Environmental Science and Engineering-Environmental Engineering |
| Publisher: | SPRINGER INT PUBLISHING AG |
| Additional Information: | Copyright for this article belongs to the SPRINGER INT PUBLISHING AG, GEWERBESTRASSE 11, CHAM, CH-6330, SWITZERLAND |
| Keywords: | PECVD; boron pre-treatment; SEM; EDS |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 14 Feb 2015 13:36 |
| Last Modified: | 14 Feb 2015 13:36 |
| URI: | http://eprints.iisc.ac.in/id/eprint/50833 |
Actions (login required)
 |
View Item |
