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Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

Mohan, Lokesh and Chandan, Greeshma and Mukundan, Shruthi and Roul, Basanta and Krupanidhi, SB (2014) Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures. In: JOURNAL OF APPLIED PHYSICS, 116 (23).

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Official URL: http://dx.doi.org/ 10.1063/1.4904749


GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current-voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights. (C) 2014 AIP Publishing LLC.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 Jan 2015 05:46
Last Modified: 21 Jan 2015 05:46
URI: http://eprints.iisc.ac.in/id/eprint/50721

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