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The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4

Chetty, Raju and Dadda, Jayaram and de Boor, Johannes and Mueller, Eckhard and Mallik, Ramesh Chandra (2015) The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4. In: INTERMETALLICS, 57 . pp. 156-162.

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Official URL: http://dx.doi.org/ 10.1016/j.intermet.2014.10.015


Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu2+xCd1-x,GeSe4 (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K-723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu2.1Cd0.9GeSe4. (C) 2014 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to the ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Keywords: Annealing; Thermoelectric properties; Microstructure; X-ray diffraction; Scanning electron microscopy
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 21 Jan 2015 04:26
Last Modified: 21 Jan 2015 04:26
URI: http://eprints.iisc.ac.in/id/eprint/50704

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