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Development of SnS quantum dot solar cells by SILAR method

Deepa, KG and Nagaraju, J (2014) Development of SnS quantum dot solar cells by SILAR method. In: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 27 . pp. 649-653.

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Official URL: http://dx.doi.org/ 10.1016/mssp.2014.08.006


SnS quantum dot solar cell is fabricated by Successive Ionic Layer Adsorption and Reaction (SILAR) method. SnS layer is optimized by different SILAR cycles of deposition. The particle size increased with the increase in number of SILAR cycles. Cu2S coated FTO is used as counter electrode against the conventional Platinum electrode. On comparison with a cell having a counter electrodeelectrolyte combination of Platinum-Iodine, Cu2S-polysulfide combination is found to improve both the short circuit current and fill factor of the solar cell. A maximum efficiency of 0.54% is obtained with an open circuit voltage of 311 mV and short circuit current density of 4.86 mA/cm. (C) 2014 Elsevier Ltd. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 13 Jan 2015 04:49
Last Modified: 13 Jan 2015 04:49
URI: http://eprints.iisc.ac.in/id/eprint/50639

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