Influence of curvature on the device physics of thin film transistors on flexible substrates

Amalraj, Rex and Sambandan, Sanjiv (2014) Influence of curvature on the device physics of thin film transistors on flexible substrates. In: JOURNAL OF APPLIED PHYSICS, 116 (16).

PDF jou_app_phy_116-16_2014.pdf - Published Version Restricted to Registered users only Download (3MB) | Request a copy

Abstract

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright for this article belongs to the AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	20 Dec 2014 05:24
Last Modified:	20 Dec 2014 05:24
URI:	http://eprints.iisc.ac.in/id/eprint/50480

Actions (login required)

View Item