A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region

Bhattacharya, Sitangshu and Saha, Dipankar and Bid, Aveek and Mahapatra, Santanu (2014) A Continuous Electrical Conductivity Model for Monolayer Graphene From Near Intrinsic to Far Extrinsic Region. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 61 (11). pp. 3646-3653.

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Abstract

We present a closed-form continuous model for the electrical conductivity of a single layer graphene (SLG) sheet in the presence of short-range impurities, long-range screened impurities, and acoustic phonons. The validity of the model extends from very low doping levels (chemical potential close to the Dirac cone vertex) to very high doping levels. We demonstrate complete functional relations of the chemical potential, polarization function, and conductivity with respect to both doping level and temperature (T), which were otherwise developed for SLG sheet only in the very low and very high doping levels. The advantage of the continuous conductivity model reported in this paper lies in its simple form which depends only on three adjustable parameters: the short-range impurity density, the long-range screened impurity density, and temperature T. The proposed theoretical model was successfully used to correlate various experiments in the midtemperature and moderate density regimes.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Keywords:	Charged impurity; chemical potential; graphene; resistance; screening
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Physical & Mathematical Sciences > Physics
Date Deposited:	20 Dec 2014 04:27
Last Modified:	20 Dec 2014 04:27
URI:	http://eprints.iisc.ac.in/id/eprint/50475

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