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Low temperature sulfurization of electrodeposited Cu(In,Al)Se-2 thin films

Shruthi, Lakshmi N and Deepa, KG and Sunil, Anantha M and Nagaraju, Jampana (2014) Low temperature sulfurization of electrodeposited Cu(In,Al)Se-2 thin films. In: APPLIED SURFACE SCIENCE, 316 . pp. 424-428.

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Official URL: http://dx.doi.org/ 10.1016/j.apsusc.2014.08.018


Sulfurization of Cu(In,Al)Se-2 films is carried out in an indigenously made set up at moderately low temperature. The films are sulfurized for different time durations of 15, 30, 45 and 60 min at 150 degrees C. InSe and Cu2S phases occurred in the films during the initial stage of sulfurization along with Cu(In,Al)(Se,S)(2) phase. The compositional analysis shows that the sulfur incorporation is saturated after 30 min. Crystallinity increased with the increase in sulfurization time. The band gap of the Cu(In,Al)Se-2 film increased up to 1.35 eV with the addition of sulfur. Single phase Cu(In,Al)(Se,S)(2) with high crystallinity is obtained after 60 min of sulfurization. (C) 2014 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Keywords: Solar energy materials; Thin films; Electrodeposition; Sulfurization; Low temperature
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 28 Nov 2014 05:05
Last Modified: 28 Nov 2014 05:05
URI: http://eprints.iisc.ac.in/id/eprint/50332

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