Diffusion of components via different modes during growth of the A15-V(3)Gaphase

Santra, Sangeeta and Paul, Aloke (2014) Diffusion of components via different modes during growth of the A15-V(3)Gaphase. In: PHILOSOPHICAL MAGAZINE LETTERS, 94 (8). pp. 487-494.

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Abstract

Based on an interdiffusion study using an incremental diffusion couple in the V-Ga binary system, we have shown that V diffuses via the lattice, whereas Ga does so via grain boundaries, for the growth of the V3Ga phase. We estimate the contributions from the two different mechanisms, which are usually difficult to delineate in an interdiffusion study. Available tracer diffusion studies and the atomic arrangement in the crystal structure have been considered for a discussion on the diffusion mechanisms.

Item Type:	Journal Article
Publication:	PHILOSOPHICAL MAGAZINE LETTERS
Publisher:	TAYLOR & FRANCIS LTD
Additional Information:	Copy right for this article belongs to the TAYLOR & FRANCIS LTD, 4 PARK SQUARE, MILTON PARK, ABINGDON OX14 4RN, OXON, ENGLAND
Keywords:	diffusion; intermetallics; grain boundaries; defects; phase boundary
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	12 Nov 2014 05:29
Last Modified:	12 Nov 2014 05:29
URI:	http://eprints.iisc.ac.in/id/eprint/50240

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